Improved power performance of InGaP-GaAs HBT with composite collector

Author

Hsin, Yue-Ming ; Chang, Chia-Yen ; Fan, Chang-Chung ; Wang, Che-Ming ; Hsu, H.T.

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

202

Lastpage

204

Abstract

InGaP/GaAs double heterojunction bipolar transistors (DHBTs) with composite collector has been proposed and fabricated to obtain the suitable heterojunction bipolar transistor (HBT) for power amplifiers in wireless communication. The composite collector combines both wide-bandgap (InGaP) and narrow-bandgap (GaAs) materials. In the composite collector, InGaP material provides high breakdown field and thus is able to be employed to reduce thickness of collector while keeping the same breakdown voltage. GaAs materials provides higher electron mobility and thus is used to reduce on-resistance and transit time. In this work, a DHBT with composite collector (DHBT_C) is presented to demonstrate its improved power performance.

Keywords

III-V semiconductors; electron mobility; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; narrow band gap semiconductors; power amplifiers; wide band gap semiconductors; HBT; InGaP-GaAs; breakdown voltage; composite collector; double heterojunction bipolar transistors; electron mobility; narrow-bandgap materials; power amplifiers; wide-bandgap materials; wireless communication; Broadband amplifiers; Composite materials; Conducting materials; Doping; Double heterojunction bipolar transistors; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Power amplifiers; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442646

Filename

1442646