DocumentCode
3369493
Title
Design and fabrication of a 10 Gb/s InGaAs/InP avalanche photodiode (APD) based on the non-local model
Author
Hwan, Sungmin ; Shim, Jongin ; Eo, Yungsean ; Yang, Seungkee ; Kang, Hwayang ; Jun, Byoungok ; Lee, Doyong ; Jang, Donghoon
Author_Institution
Dept. of Electron. & Comput. Eng., Hanyang Univ., Ansan, South Korea
fYear
2004
fDate
31 May-4 June 2004
Firstpage
215
Lastpage
218
Abstract
A 10 Gb/s APD is designed and fabricated by using the non-local model. Multiplication layer thickness and 2-dimensional Zn-diffusion profiles are optimized. The gain and bandwidth product (GB) more than 80 GHz, spatially uniform gain distribution, and the dark current less than 1 nA are successfully obtained.
Keywords
III-V semiconductors; avalanche photodiodes; dark conductivity; diffusion; gallium arsenide; indium compounds; optical fabrication; zinc; 10 Gbit/s; 2D Zn-diffusion profiles; InGaAs-InP; avalanche photodiode; dark current; gain-bandwidth product; multiplication layer thickness; nonlocal model; Absorption; Avalanche photodiodes; Bandwidth; Dark current; Fabrication; Indium gallium arsenide; Indium phosphide; Ionization; Laboratories; Optical noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442650
Filename
1442650
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