DocumentCode
3369555
Title
The effects of semi-insulating current blocking layers on static and dynamic characteristics in direct-modulated semiconductor lasers
Author
Kim, Dongchurl ; Shim, Jongin ; Eo, Yungseon ; Kang, Joongkoo ; Park, Munkyu ; Jang, Donghoon
Author_Institution
Dept. of Electr. & Comput. Eng., Hanyang Univ., Ansan, South Korea
fYear
2004
fDate
31 May-4 June 2004
Firstpage
228
Lastpage
231
Abstract
We have investigated the effects of current blocking layers in 10 Gb/s 1.3 μm DFB lasers in view of the slope efficiency and the modulation bandwidth. It is experimentally shown that the current blocking structure consisting of p-InP(clad)/n-InP/i-InP/n-InP/i-InP/n-InP(sub.) gives a high slope efficiency as well as a large modulation bandwidth of above 10 GHz at 70 °C.
Keywords
III-V semiconductors; distributed feedback lasers; indium compounds; iron; optical communication equipment; optical modulation; quantum well lasers; 1.3 mum; 10 Gbit/s; 70 degC; DFB lasers; InP; direct-modulated semiconductor lasers; modulation bandwidth; semiinsulating current blocking layers; slope efficiency; Bandwidth; Capacitive sensors; Diode lasers; Dry etching; Leakage current; Power lasers; Quantum well devices; Semiconductor lasers; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442654
Filename
1442654
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