Integrated DFB laser electro-absorption modulator based on identical MQW-double stack active layer for high-speed modulation beyond 10 Gbit/s

Author

Saravanan, Brem Kumar ; Gerlach, Philipp ; Peschke, M. ; Knoedl, Thomas ; Schreiner, Rupert ; Hanke, Christian ; Stegmuelle, Bemhard

Author_Institution

Corp. Res. Photonics, Infineon Technol. AG, Munich, Germany

fYear

2004

fDate

31 May-4 June 2004

Firstpage

236

Lastpage

238

Abstract

Integrated DFBLD-EAM-SOA devices utilizing an identical MQW active region have been realized in the AlGaInAs/InP material system. A fiber-coupled optical power of >6 mW with a 10 dB static extinction, 44 dB SMSR single-mode spectrum and a 3 dBe cutoff frequency of 25 GHz was measured.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical modulation; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; integrated optoelectronics; optical fibre couplers; quantum well lasers; semiconductor optical amplifiers; 10 dB; 25 GHz; 44 dB; AlGaInAs-InP; fiber-coupled optical power; high-speed modulation; identical MQW-double stack active layer; integrated DFB laser electro-absorption modulator; integrated DFBLD-EAM-SOA devices; single-mode spectrum; Cutoff frequency; Fiber lasers; Frequency measurement; High speed optical techniques; Indium phosphide; Optical fiber devices; Optical materials; Optical modulation; Power measurement; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442656

Filename

1442656