DocumentCode :
3369600
Title :
A new Schmitt trigger circuit in a 0.13 μm 1/2.5 V CMOS process to receive 3.3 V input signals
Author :
Chen, Shih-Lun ; Ker, Ming-Dou
Author_Institution :
Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
2
fYear :
2004
fDate :
23-26 May 2004
Abstract :
A new Schmitt trigger circuit, which consists of low-voltage devices, can receive the high-voltage signal without gate-oxide reliability problem, is proposed. The new proposed circuit, which can operate in a 3.3 V signal environment without suffering high-voltage gate-oxide stress, has been fabricated in a 0.13 μm 1/2.5 V CMOS process. The experimental results show that the measured transition threshold voltages of the new proposed Schmitt trigger circuit are about 1 V and 2.5 V, respectively. The proposed Schmitt trigger circuit is suitable for mixed-voltage I/O interfaces circuit to receive the input signals and reject the input noise.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated circuit noise; low-power electronics; silicon; trigger circuits; 0.13 micron; 1 V; 2.5 V; 3.3 V; CMOS process; Schmitt trigger circuit; Si; high voltage signal; input noise; low voltage devices; mixed voltage I/O interfaces circuit; transition threshold voltages; CMOS process; Circuit noise; Hysteresis; Inverters; Power supplies; Semiconductor device noise; Signal processing; Stress; Threshold voltage; Trigger circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
Type :
conf
DOI :
10.1109/ISCAS.2004.1329336
Filename :
1329336
Link To Document :
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