A new Schmitt trigger circuit in a 0.13 μm 1/2.5 V CMOS process to receive 3.3 V input signals

Author

Chen, Shih-Lun ; Ker, Ming-Dou

Author_Institution

Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

2

fYear

2004

fDate

23-26 May 2004

Abstract

A new Schmitt trigger circuit, which consists of low-voltage devices, can receive the high-voltage signal without gate-oxide reliability problem, is proposed. The new proposed circuit, which can operate in a 3.3 V signal environment without suffering high-voltage gate-oxide stress, has been fabricated in a 0.13 μm 1/2.5 V CMOS process. The experimental results show that the measured transition threshold voltages of the new proposed Schmitt trigger circuit are about 1 V and 2.5 V, respectively. The proposed Schmitt trigger circuit is suitable for mixed-voltage I/O interfaces circuit to receive the input signals and reject the input noise.

Keywords

CMOS integrated circuits; elemental semiconductors; integrated circuit noise; low-power electronics; silicon; trigger circuits; 0.13 micron; 1 V; 2.5 V; 3.3 V; CMOS process; Schmitt trigger circuit; Si; high voltage signal; input noise; low voltage devices; mixed voltage I/O interfaces circuit; transition threshold voltages; CMOS process; Circuit noise; Hysteresis; Inverters; Power supplies; Semiconductor device noise; Signal processing; Stress; Threshold voltage; Trigger circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on

Print_ISBN

0-7803-8251-X

Type

conf

DOI

10.1109/ISCAS.2004.1329336

Filename

1329336