Title :
Balanced Truncation of a stable non-minimal deep-submicron CMOS interconnect
Author :
Zjajo, Amir ; Tang, Qin ; Berkelaar, Michel ; Van der Meijs, Nick
Author_Institution :
Circuits & Syst. Group, Delft Univ. of Technol., Delft, Netherlands
Abstract :
As the widening of process variability in submicron CMOS technology calls for accurate timing models, their deployment requires well-controlled characterization techniques to cope with the complexity and scalability. In this context, model order reduction techniques have been used extensively to reduce the complexity of extracted interconnect circuits and to expedite fast and accurate circuit simulation. In the interconnect modeling, solving large-scale Lyapunov equations arises as a necessity in model order reduction techniques based on Balanced Truncation. In this paper, within this framework, dominant eigensubspaces of the product of the system Gramians are approximated directly. We construct orthogonal basis sets for the dominant subspaces of controllability and observability Gramians and perform eigenvalue decomposition to reduce the cost of singular value decomposition. As the experimental results indicate, the proposed approach can significantly reduce the complexity of interconnect, while retaining high accuracy in comparison to the original model.
Keywords :
CMOS integrated circuits; circuit simulation; eigenvalues and eigenfunctions; integrated circuit interconnections; balanced truncation; circuit simulation; eigensubspaces; eigenvalue decomposition; interconnect modeling; large-scale Lyapunov equations; model order reduction; nonminimal deep-submicron CMOS interconnect; orthogonal basis sets; system Gramians; Approximation methods; Computational modeling; Integrated circuit interconnections; Integrated circuit modeling; Mathematical model; Reduced order systems; Timing; balanced truncation; interconnect model; model order reduction;
Conference_Titel :
IC Design & Technology (ICICDT), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4244-9019-6
DOI :
10.1109/ICICDT.2011.5783206