Title :
Impact of La on the bias-temperature instability of the HfSiO High-κ n-MOSFET
Author :
Ang, D.S. ; Du, G.A.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Lanthanum (La), which has been used in recent works to tune the threshold voltage of HfSiO high-κ n-MOSFETs, is shown to introduce a new bulk degradation mechanism. Unlike the conventional charge trapping mechanism which exhibits low activation energy (~0.05 eV) and fast post-stress recovery, the La induced degradation mechanism is found to be relatively permanent and has higher activation energy (~0.26 eV). The latter is expected to have a significant impact on the positive-bias temperature instability of n-MOSFETs employing La-doped high-κ gate dielectrics.
Keywords :
MOSFET; hafnium compounds; high-k dielectric thin films; lanthanum; HfSiON:La; activation energy; charge trapping; high-κ n-MOSFET; positive-bias temperature instability; post-stress recovery; threshold voltage; Charge carrier processes; Degradation; Logic gates; MOS devices; MOSFET circuits; Stress; Voltage measurement; Metal/high-κ gate stack; bias-temperature instability; interface states; oxide traps; rare-earth oxides;
Conference_Titel :
IC Design & Technology (ICICDT), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4244-9019-6
DOI :
10.1109/ICICDT.2011.5783214
