Impact of La on the bias-temperature instability of the HfSiO High-κ n-MOSFET

Author

Ang, D.S. ; Du, G.A.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2011

fDate

2-4 May 2011

Firstpage

1

Lastpage

4

Abstract

Lanthanum (La), which has been used in recent works to tune the threshold voltage of HfSiO high-κ n-MOSFETs, is shown to introduce a new bulk degradation mechanism. Unlike the conventional charge trapping mechanism which exhibits low activation energy (~0.05 eV) and fast post-stress recovery, the La induced degradation mechanism is found to be relatively permanent and has higher activation energy (~0.26 eV). The latter is expected to have a significant impact on the positive-bias temperature instability of n-MOSFETs employing La-doped high-κ gate dielectrics.

Keywords

MOSFET; hafnium compounds; high-k dielectric thin films; lanthanum; HfSiON:La; activation energy; charge trapping; high-κ n-MOSFET; positive-bias temperature instability; post-stress recovery; threshold voltage; Charge carrier processes; Degradation; Logic gates; MOS devices; MOSFET circuits; Stress; Voltage measurement; Metal/high-κ gate stack; bias-temperature instability; interface states; oxide traps; rare-earth oxides;

fLanguage

English

Publisher

ieee

Conference_Titel

IC Design & Technology (ICICDT), 2011 IEEE International Conference on

Conference_Location

Kaohsiung

ISSN

Pending

Print_ISBN

978-1-4244-9019-6

Type

conf

DOI

10.1109/ICICDT.2011.5783214

Filename

5783214