DocumentCode
3369968
Title
Dual-gate shorted-anode LIGBT with p+ injector eliminating the negative resistance regime
Author
Lee, Byeong-Hoon ; Kim, Seong-Dong ; Byeon, Dae-Seok ; Chun, Jung-Hoon ; Han, Min-Koo ; Choi, Yearn-Ik
Author_Institution
Seoul Nat. Univ., South Korea
fYear
1998
fDate
3-6 Jun 1998
Firstpage
269
Lastpage
272
Abstract
A new shorted-anode lateral IGBT with dual gate and p+ injector (DG-SALIGBT) is proposed and fabricated in order to eliminate the negative differential resistance (NDR) regime, which is the inherent characteristic of SALIGBTs, by modulating the drift region conductivity gradually. The experimental results show that the NDR regime is eliminated completely and the forward voltage drop is reduced considerably in the DG-SALIGBT when compared with the conventional SALIGBT, without sacrificing the switching speed. We have analyzed the device operation mechanism, such as hole injection phenomena, by 2D numerical simulation
Keywords
hole mobility; insulated gate bipolar transistors; negative resistance; numerical analysis; power bipolar transistors; semiconductor device models; semiconductor device testing; 2D numerical simulation; DG-SALIGBT; NDR regime; device operation mechanism; drift region conductivity modulation; dual gate structure; dual-gate shorted-anode LIGBT; forward voltage drop; hole injection phenomena; negative differential resistance regime; negative resistance regime elimination; p+ injector; shorted-anode lateral IGBT; switching speed; Anodes; Conductivity; Electric resistance; Impedance; Insulated gate bipolar transistors; Low voltage; Numerical simulation; Plasmas; Power integrated circuits; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location
Kyoto
ISSN
1063-6854
Print_ISBN
0-7803-4752-8
Type
conf
DOI
10.1109/ISPSD.1998.702685
Filename
702685
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