Title :
Dual-gate shorted-anode LIGBT with p+ injector eliminating the negative resistance regime
Author :
Lee, Byeong-Hoon ; Kim, Seong-Dong ; Byeon, Dae-Seok ; Chun, Jung-Hoon ; Han, Min-Koo ; Choi, Yearn-Ik
Author_Institution :
Seoul Nat. Univ., South Korea
Abstract :
A new shorted-anode lateral IGBT with dual gate and p+ injector (DG-SALIGBT) is proposed and fabricated in order to eliminate the negative differential resistance (NDR) regime, which is the inherent characteristic of SALIGBTs, by modulating the drift region conductivity gradually. The experimental results show that the NDR regime is eliminated completely and the forward voltage drop is reduced considerably in the DG-SALIGBT when compared with the conventional SALIGBT, without sacrificing the switching speed. We have analyzed the device operation mechanism, such as hole injection phenomena, by 2D numerical simulation
Keywords :
hole mobility; insulated gate bipolar transistors; negative resistance; numerical analysis; power bipolar transistors; semiconductor device models; semiconductor device testing; 2D numerical simulation; DG-SALIGBT; NDR regime; device operation mechanism; drift region conductivity modulation; dual gate structure; dual-gate shorted-anode LIGBT; forward voltage drop; hole injection phenomena; negative differential resistance regime; negative resistance regime elimination; p+ injector; shorted-anode lateral IGBT; switching speed; Anodes; Conductivity; Electric resistance; Impedance; Insulated gate bipolar transistors; Low voltage; Numerical simulation; Plasmas; Power integrated circuits; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702685
