The influence of annealing temperature and film thickness on crystallization behaviors of IGZO thin films

Author

Jaeseung Jo ; JaeYu Cho ; Hee Kyeung Hong ; Sungman Kim ; Jehun Lee ; JunHyung Lim ; Junho Song ; Jin Hyeok Kim ; Jaeyeong Heo

Author_Institution

Dept. of Mater. Sci. & Eng., Chonnam Nat. Univ., Gwangju, South Korea

fYear

2015

fDate

1-4 July 2015

Firstpage

147

Lastpage

149

Abstract

The influence of the thermal annealing temperature on the crystallization behaviors of indium gallium zinc oxide (IGZO) thin films was investigated. The IGZO was deposited by rf-magnetron sputtering and the films were annealed by conventional furnace at 400-850 °C for 1hr. X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the change in crystallinity occurs at ~700 °C. Over 700 °C, the XRD showed that the IGZO films change from of amorphous to of polycrystalline state. When the film thickness is decreased down to ~10 nm, c-axis preferred orientation was formed.

Keywords

X-ray diffraction; amorphous semiconductors; annealing; crystallisation; gallium compounds; indium compounds; semiconductor growth; semiconductor thin films; sputter deposition; texture; transmission electron microscopy; ή-magnetron sputtering; IGZO thin film thickness; InGaZnO; TEM; X-ray diffraction; XRD; amorphous-polycrystallinetransition state; c-axis preferred orientation; conventional furnace; crystallinity; crystallization behavior; indium gallium zinc oxide thin films; temperature 400 degC to 850 degC; thermal annealing temperature; time 1 hr; transmission electron microscopy; Annealing; Crystallization; Films; Reliability; Silicon; Thin film transistors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2015.7173226

Filename

7173226