Title :
The influence of annealing temperature and film thickness on crystallization behaviors of IGZO thin films
Author :
Jaeseung Jo ; JaeYu Cho ; Hee Kyeung Hong ; Sungman Kim ; Jehun Lee ; JunHyung Lim ; Junho Song ; Jin Hyeok Kim ; Jaeyeong Heo
Author_Institution :
Dept. of Mater. Sci. & Eng., Chonnam Nat. Univ., Gwangju, South Korea
Abstract :
The influence of the thermal annealing temperature on the crystallization behaviors of indium gallium zinc oxide (IGZO) thin films was investigated. The IGZO was deposited by rf-magnetron sputtering and the films were annealed by conventional furnace at 400-850 °C for 1hr. X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the change in crystallinity occurs at ~700 °C. Over 700 °C, the XRD showed that the IGZO films change from of amorphous to of polycrystalline state. When the film thickness is decreased down to ~10 nm, c-axis preferred orientation was formed.
Keywords :
X-ray diffraction; amorphous semiconductors; annealing; crystallisation; gallium compounds; indium compounds; semiconductor growth; semiconductor thin films; sputter deposition; texture; transmission electron microscopy; ή-magnetron sputtering; IGZO thin film thickness; InGaZnO; TEM; X-ray diffraction; XRD; amorphous-polycrystallinetransition state; c-axis preferred orientation; conventional furnace; crystallinity; crystallization behavior; indium gallium zinc oxide thin films; temperature 400 degC to 850 degC; thermal annealing temperature; time 1 hr; transmission electron microscopy; Annealing; Crystallization; Films; Reliability; Silicon; Thin film transistors; X-ray scattering;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2015.7173226
