Title :
Effect of trench-sidewall smoothing on on-state voltage of injection enhancement gate transistor
Author :
Yahata, Akihiro ; Urano, Satoshi ; Inoue, Tomoki ; Shinohe, Takashi
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
We determined the optimum condition to smooth the roughness of the trench sidewall and this condition was applied to the fabrication of the injection enhancement gate transistor (IEGT). The on-state voltage was drastically decreased by smoothing the trench sidewall
Keywords :
insulated gate bipolar transistors; power bipolar transistors; semiconductor device testing; sputter etching; surface topography; IEGT; injection enhancement gate transistor; injection enhancement gate transistor fabrication; on-state voltage; optimum sidewall smoothing conditions; reactive ion etching; trench sidewall; trench sidewall roughness; trench-sidewall smoothing effect; Etching; Fabrication; Gases; Resists; Rough surfaces; Smoothing methods; Surface roughness; Thyristors; Transistors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702686
