Title :
Characterization of electron cyclotron resonance plasma oxide for sub-half micron technology
Author :
Wang, C.K. ; Wang, P.T. ; Liu, L.M. ; Huang, Y.C. ; Cheng, H.C. ; Dai, B.T. ; Lin, M.S.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
31 May-2 Jun 1995
Abstract :
Electron cyclotron resonance plasma oxide (ECR oxide) for inter-metal dielectric application has been well characterized for sub-half micron technology. Compared to spin-on-glass (SOG) and O3 -TEOS films, the developed ECR oxide process has much superior moisture resistance and lower compressive film stress. The void-free gap filling performance for spacing below 0.4 μm and aspect ratio exceeding two is demonstrated. Good planarity can be obtained by combining the ECR CVD process with either SOG full etchback or chemical mechanical polishing (CMP) technique. The impact of the ECR CVD process on devices is also evaluated. The device damage can he observed if the ECR CVD process is not optimized. The most crucial process parameter for device damage is microwave power; reducing microwave power can eliminate the device damage
Keywords :
VLSI; dielectric thin films; integrated circuit metallisation; integrated circuit reliability; integrated circuit technology; moisture; plasma CVD; plasma CVD coatings; 0.5 micron; ECR CVD process; ECR plasma oxide; compressive film stress; electron cyclotron resonance plasma oxide; inter-metal dielectric application; microwave power; moisture resistance; sub-half micron technology; void-free gap filling performance; Compressive stress; Cyclotrons; Dielectrics; Electrons; Etching; Filling; Microwave devices; Moisture; Plasma applications; Resonance;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-2773-X
DOI :
10.1109/VTSA.1995.524656
