Modelling and optimisation of the static saturation characteristics of quantum well semiconductor optical amplifiers

Author

Greene, P.D. ; Fice, M.J. ; Whiteaway, J.E.A. ; Collar, A.J.

Author_Institution

Nortel Ltd., Harlow, UK

fYear

1996

fDate

21-25 Apr 1996

Firstpage

180

Lastpage

183

Abstract

A method has been devised for optimising a multi-quantum well (MQW) semiconductor optical amplifier (SOA) operated at a constant high optical intensity. By adapting the relationship proposed by McIlroy et al. (1985) between gain and current density, the effect of gain saturation at high optical power can be calculated and minimised. Good agreement between theory and experiment has been obtained for InP-based SOA structures. For a fixed current, the optimum device length decreases as the optical input power increases

Keywords

III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; optical saturation; optimisation; quantum well lasers; ridge waveguides; waveguide lasers; InGaAsP-InP; InP-based structures; current density; gain; gain saturation; modelling; multi-quantum well semiconductor optical amplifier; optical input power; optimisation; optimum device length; quantum well semiconductor optical amplifiers; static saturation characteristics; Current density; Optical devices; Optical saturation; Optical sensors; Optical waveguides; Performance gain; Quantum well lasers; Semiconductor optical amplifiers; Stimulated emission; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491966

Filename

491966