High-bandwidth 1.55 μm waveguide integrated photodetector

Author

Unterbörsch, G. ; Trommer, D. ; Umbach, A. ; Mekonnen, G.G.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

fYear

1996

fDate

21-25 Apr 1996

Firstpage

203

Lastpage

206

Abstract

Future high-bit rate optical communication networks operating at bit rates above 40 Gbit/s and, in particular, wireless cellular mobile communication systems based on an optical distribution network necessitate the availability of accordingly fast, but also highly efficient photodetectors especially for the 1.55 μm wavelength region. We present an InP based pin-photodetector with an integrated passive optical waveguide using evanescent field coupling for operation in the wavelength around of 1.55 μm

Keywords

III-V semiconductors; cellular radio; indium compounds; infrared detectors; integrated optics; integrated optoelectronics; optical couplers; optical waveguides; photodetectors; μm wavelength region; 1.55 mum; 40 Gbit/s; InP; InP based pin-photodetector; efficient photodetectors; evanescent field coupling; high-bandwidth μm waveguide integrated photodetector; high-bit rate optical communication networks; integrated passive optical waveguide; optical distribution network; wireless cellular mobile communication systems; Bit rate; Cellular networks; Indium phosphide; Mobile communication; Optical fiber communication; Optical fiber networks; Optical surface waves; Optical waveguides; Photodetectors; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491972

Filename

491972