Title :
A maximum total leakage current estimation method
Author :
Xu, Yongjun ; Luo, Zuying ; Li, Xiaowei
Author_Institution :
Inst. of Comput. Technol., Chinese Acad. of Sci., Beijing, China
Abstract :
As transistor size continues to scale down, leakage power has become a critical issue of integrated circuit design. The maximum total leakage current, which is mainly determined by the sum of subthreshold, gate and reverse biased junction BTBT leakage current, is an important parameter to guide low-leakage and high-performance circuit designs. Up to now, how to estimate the maximum leakage current accurately within endurable time remains unsolved. Precise simulators can calculate leakage current accurately, but are only practical for small circuits. In this paper, a fast maximum leakage current estimation method is introduced accompanied with our gate-level leakage current simulator called iLeakage. Experiments on ISCAS circuit suits show that the simulator is significantly accelerated under acceptable error compared with HSPICE and the algorithm is applicable for large circuits.
Keywords :
CMOS integrated circuits; circuit simulation; genetic algorithms; integrated circuit design; integrated circuit modelling; leakage currents; HSPICE; gate biased junction; gate level leakage current simulator; high performance circuit design; iLeakage simulator; integrated circuit design; low leakage circuit design; maximum total leakage current estimation; reverse biased junction; Circuit simulation; Circuit synthesis; Doping profiles; Geometry; Integrated circuit modeling; Leakage current; Semiconductor device modeling; Semiconductor process modeling; Switches; Voltage;
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
DOI :
10.1109/ISCAS.2004.1329382