Effects of PECVD oxide process in the sandwiched SOG structure on MOSFET hot-carrier reliability

Author

Allman, D. ; Han, L.K. ; Kwong, D.L.

Author_Institution

Symbios Logic Inc., Colorado Springs, CO, USA

fYear

1995

fDate

31 May-2 Jun 1995

Firstpage

173

Lastpage

175

Abstract

In this paper, we have systematically investigated the effect of PECVD oxide process in the sandwiched SOG structure for interlevel dielectric applications on MOSFET hot-carrier reliability. Both silane-based oxide (OX) and tetraethylorthosilicate-based oxide (TEOS) were used to form various combinations with SOG as interlevel dielectrics. The influence of N₂O (N₂O-TEOS) and O ₂ (O₂-TEOS) as the source gas of oxygen during the PECVD TEOS deposition was also studied. Results indicate that O₂TEOS/SOG/O₂TEOS increases the number of electron traps in the gate oxide and deteriorate SiO₂-Si interface endurance, thus reducing device lifetime. In addition, the use of OX to replace any one of the O₂-TEOS layers improves hot-carrier immunity considerably. Finally, N₂O-TEOS/SOG/OX is shown to be a very promising process due to its conformal nature over OX/SOG/OX and improved reliability over O₂-TEOS/SOG/OX

Keywords

MOSFET; dielectric thin films; electron traps; hot carriers; plasma CVD; plasma CVD coatings; semiconductor device metallisation; semiconductor device reliability; MOSFET hot-carrier reliability; N₂O; O₂; PECVD oxide process; SiO₂-Si; SiO₂/Si interface endurance; TEOS; device lifetime; electron traps; gate oxide; hot-carrier immunity; interlevel dielectric applications; sandwiched SOG structure; silane-based oxide; spin-on glass; tetraethylorthosilicate-based oxide; CMOS technology; Degradation; Dielectrics; Encapsulation; Hot carrier effects; Hot carriers; MOSFET circuits; Planarization; Stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-2773-X

Type

conf

DOI

10.1109/VTSA.1995.524657

Filename

524657