Inverted, substrate-removed MSM and Schottky diode optical detectors

Author

Vaccaro, K. ; Spaziani, S.M. ; Dauplaise, H.M. ; Berger, P.R. ; Davis, A. ; Tsacoyeanes, C.W. ; Martin, E.A. ; Lorenzo, J.P.

Author_Institution

Opto-Electron. Components Branch, US Air Force Rome Lab., Hanscom AFB, MA, USA

fYear

1996

fDate

21-25 Apr 1996

Firstpage

226

Lastpage

229

Abstract

The InGaAs metal-semiconductor-metal (MSM) photodetector is a high-performance component for lightwave communication systems. Low capacitance, dictated by finger spacing, and high carrier drift velocity result in GHz operating bandwidths. Efficient optical absorption to 1.7 μm results in high responsivity at the wavelengths preferred for optical fiber communications, 1.3 and 1.5 μm. Simple processing steps make the MSM practical for monolithic integration with low-noise, high electron mobility transistor (HEMT) receiver amplifiers and other opto-electronic circuit applications

Keywords

HEMT integrated circuits; III-V semiconductors; Schottky diodes; gallium arsenide; indium compounds; infrared detectors; integrated optoelectronics; metal-semiconductor-metal structures; optical communication equipment; optical noise; photodetectors; 1.3 mum; 1.5 mum; 1.7 mum; GHz operating bandwidths; HEMT receiver amplifiers; InGaAs; InGaAs MSM photodetector; InGaAs metal-semiconductor-metal photodetector; Schottky diode optical detectors; finger spacing; high carrier drift velocity; high responsivity; high-performance component; inverted substrate-removed MSM optical detectors; lightwave communication systems; low capacitance; low-noise high electron mobility transistor HEMT receiver amplifiers; monolithic integration; optical absorption; optical fiber communications; opto-electronic circuit applications; processing steps; Bandwidth; Capacitance; Electron mobility; Electron optics; Fingers; HEMTs; Indium gallium arsenide; Optical receivers; Photodetectors; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491978

Filename

491978