Title :
Polarization insensitive interferometric wavelength converter with tensile strained InGaAs/InGaAsP MQW structure
Author :
Schilling, M. ; Wiedemann, P. ; Daub, K. ; Idler, W. ; Klenk, M. ; Koerner, U. ; Lach, E. ; Laube, G. ; Wünstel, K.
Author_Institution :
Alcatel Telecom Res. Div., Stuttgart, Germany
Abstract :
Compact monolithic wavelength converters based on integrated three-port Mach-Zehnder interferometer (MZI) structure are realized for the first time with strongly reduced polarization sensitivity due to incorporation of tensile strained MQW active layers. The (InGaAs/InGaAsP) MQW structures are grown by LP MOVPE on full 2 inch n-InP substrates. By fine adjustment of tensile strain (varied between -0.3 and -0.45%) the optimum conditions to achieve equalized gain for TE and TM modes have been identified in accordance with modelling results. Assessment of static and dynamic all-optical wavelength conversion performance has been done for the MZI devices. Best results for TE/TM ratio are obtained for MZI wavelength converters with -0.34% tensile strain. A TE/TM ratio ⩽1 dB is achieved within a 20 nm wavelength conversion window. Penalty-free 2.5 Gbit/s polarization-insensitive all-optical wavelength conversion including extinction ratio improvement is demonstrated
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical fabrication; optical frequency conversion; optical waveguides; semiconductor quantum wells; vapour phase epitaxial growth; 2.5 Gbit/s; InGaAs-InGaAsP; InGaAs/InGaAsP; InGaAs/InGaAsP MQW structure; InP; LP MOVPE; MQW structures; TE modes; TE/TM ratio; TM modes; all-optical wavelength conversion performance; equalized gain; extinction ratio; integrated three-port Mach-Zehnder interferometer; monolithic wavelength converters; n-InP substrate; optimum conditions; polarization insensitive interferometric wavelength converter; polarization sensitivity; tensile strain; tensile strained MQW active layers; tensile strained MQW structure; wavelength conversion window; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Optical interferometry; Optical polarization; Optical wavelength conversion; Quantum well devices; Tellurium; Tensile strain; Wavelength division multiplexing;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491979