• DocumentCode
    3370444
  • Title

    Polarization insensitive interferometric wavelength converter with tensile strained InGaAs/InGaAsP MQW structure

  • Author

    Schilling, M. ; Wiedemann, P. ; Daub, K. ; Idler, W. ; Klenk, M. ; Koerner, U. ; Lach, E. ; Laube, G. ; Wünstel, K.

  • Author_Institution
    Alcatel Telecom Res. Div., Stuttgart, Germany
  • fYear
    1996
  • fDate
    21-25 Apr 1996
  • Firstpage
    230
  • Lastpage
    233
  • Abstract
    Compact monolithic wavelength converters based on integrated three-port Mach-Zehnder interferometer (MZI) structure are realized for the first time with strongly reduced polarization sensitivity due to incorporation of tensile strained MQW active layers. The (InGaAs/InGaAsP) MQW structures are grown by LP MOVPE on full 2 inch n-InP substrates. By fine adjustment of tensile strain (varied between -0.3 and -0.45%) the optimum conditions to achieve equalized gain for TE and TM modes have been identified in accordance with modelling results. Assessment of static and dynamic all-optical wavelength conversion performance has been done for the MZI devices. Best results for TE/TM ratio are obtained for MZI wavelength converters with -0.34% tensile strain. A TE/TM ratio ⩽1 dB is achieved within a 20 nm wavelength conversion window. Penalty-free 2.5 Gbit/s polarization-insensitive all-optical wavelength conversion including extinction ratio improvement is demonstrated
  • Keywords
    III-V semiconductors; Mach-Zehnder interferometers; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical fabrication; optical frequency conversion; optical waveguides; semiconductor quantum wells; vapour phase epitaxial growth; 2.5 Gbit/s; InGaAs-InGaAsP; InGaAs/InGaAsP; InGaAs/InGaAsP MQW structure; InP; LP MOVPE; MQW structures; TE modes; TE/TM ratio; TM modes; all-optical wavelength conversion performance; equalized gain; extinction ratio; integrated three-port Mach-Zehnder interferometer; monolithic wavelength converters; n-InP substrate; optimum conditions; polarization insensitive interferometric wavelength converter; polarization sensitivity; tensile strain; tensile strained MQW active layers; tensile strained MQW structure; wavelength conversion window; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Optical interferometry; Optical polarization; Optical wavelength conversion; Quantum well devices; Tellurium; Tensile strain; Wavelength division multiplexing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
  • Conference_Location
    Schwabisch-Gmund
  • Print_ISBN
    0-7803-3283-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1996.491979
  • Filename
    491979