New intelligent power multi-chips modules with junction temperature detecting function

Author

Kajiwara, Tamao ; Yamaguchi, Atsushi ; Hoshi, Yasuyuki ; Sakurai, Kenya

Author_Institution

Fuji Electr. Co. Ltd., Nagano, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

281

Lastpage

284

Abstract

A new R-series IGBT-intelligent power module (IGBT-IPM) named the R-IPM has been developed. This R-IPM consists solely of silicon semiconductor chips, called IPMCMs (intelligent power multi-chip modules). The exclusive ICs used in the IPM provide over-temperature protection by directly detecting the junction temperature (T_j) of an IGBT chip. This is a worldwide first. This paper describes the features of the R-IPM and the T_j detecting function technology

Keywords

bipolar integrated circuits; insulated gate bipolar transistors; integrated circuit design; integrated circuit measurement; integrated circuit packaging; multichip modules; power bipolar transistors; power integrated circuits; temperature measurement; IGBT chip; IGBT-IPM; IPMCMs; R-IPM; R-series IGBT-intelligent power module; Si; intelligent power multi-chip modules; junction temperature; junction temperature detecting function; junction temperature detecting function technology; over-temperature protection; silicon semiconductor chips; Circuit simulation; Costs; Insulated gate bipolar transistors; Integrated circuit noise; Low pass filters; Power dissipation; Protection; Pulse width modulation; Silicon; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702688

Filename

702688