DocumentCode :
3370568
Title :
Carrier lifetimes and gain in 1.3-/spl mu/m strained lnAsP/lnGaAsP multiple-quantum-well lasers
Author :
Pifcaf, J.M. ; Thiagarajan, Padma ; Menoni, C.S. ; Robinson, G.Y. ; Temkin, H.
Author_Institution :
Department of Electrical Engineering, Colorado State University
Volume :
11
fYear :
1997
fDate :
18-23 May 1997
Firstpage :
158
Lastpage :
159
Keywords :
Charge carrier lifetime; Gas lasers; Indium phosphide; Laser modes; Optical waveguides; Polarization; Quantum well devices; Quantum well lasers; Tellurium; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4125-2
Type :
conf
DOI :
10.1109/CLEO.1997.602395
Filename :
602395
Link To Document :
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