Title :
Progress in development of high power NPT-IGBT module
Author :
Miyashita, S. ; Yoshiwatari, S. ; Kobayashi, S. ; Sakurai, K.
Author_Institution :
Fuji Electr. Co. Ltd., Nagano, Japan
Abstract :
This paper introduces the technology for a newly developed 1200 V/600 A 1-in-1 nonpunchthrough IGBT (NPT-IGBT) module. This IGBT has features such as low power dissipation loss, low noise, soft switching and high reliability. These features have been realized by advanced simulation technologies such as device and circuit simulation, and stress analysis for the 3D-structure
Keywords :
circuit analysis computing; insulated gate bipolar transistors; losses; power bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor device packaging; semiconductor device reliability; stress analysis; switching; 1200 V; 3D structure stress analysis; 600 A; circuit simulation; device simulation; noise; nonpunchthrough IGBT module; power NPT-IGBT module; power dissipation loss; reliability; simulation technology; soft switching; Analytical models; Circuit noise; Circuit simulation; Insulated gate bipolar transistors; Power dissipation; Power electronics; Production facilities; Space vector pulse width modulation; Stress; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702689
