• DocumentCode
    3370863
  • Title

    High performance 50 nm T-Gate In0.52Al0.48As/In0.70Ga0.30As pseudomorphic high electron mobility transistors

  • Author

    Cao, Xin ; Thorns, S. ; McLelland, Helen ; Elgaid, Khaled ; Stanley, Colin ; Thayne, Iain

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
  • fYear
    2004
  • fDate
    31 May-4 June 2004
  • Firstpage
    292
  • Lastpage
    294
  • Abstract
    50 nm T-gates InP pHEMTs with 70% indium channel were fabricated using a novel UVIII/LOR/PMMA resist stack e-beam lithograph and using a "digital" gate recess technology. The initial devices exhibited a gm of 1400 mS/mm and an ft of 420 GHz. A very high DC yield was also achieved.
  • Keywords
    III-V semiconductors; aluminium compounds; electron beam lithography; etching; gallium arsenide; high electron mobility transistors; indium compounds; 420 GHz; 50 nm; In0.52Al0.48As-In0.70Ga0.30As; UVIII-LOR-PMMA resist stack e-beam lithograph; digital gate recess technology; indium channel; pHEMT; pseudomorphic high electron mobility transistors; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lithography; MODFETs; Metallization; PHEMTs; Resists; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8595-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2004.1442712
  • Filename
    1442712
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3370863