InAlAs/InGaAs double-gate HEMTs with high extrinsic transconductance

Author

Wichmann, N. ; Duszynski, I. ; Bollaert, S. ; Wallart, X. ; Cappy, A.

Author_Institution

Departement Hyperfrequences et Semicond., Institut d´´Electronique, de Microelectronique et de Nanotechnologie, Villeneuve d´´Ascq, France

fYear

2004

fDate

31 May-4 June 2004

Firstpage

295

Lastpage

298

Abstract

This paper reports fabrication, DC and RF characterization of the In_0.52Al_0.48As/In_0.53Ga_0.47As double-gate HEMTs with sub-micron gate lengths. These devices have obtained a maximum extrinsic transconductance g_m of 2650 mS/mm with a corresponding drain current I_d equal to 310 mA/mm. This extrinsic transconductance is the highest value ever reported for any transistor. Due to this high extrinsic transconductance, the ratio g_m/I_d is 8V^-1 indicating the high charge control efficiency. Low output conductance g_d is obtained, denoting the reduction of short channel effects. The combined high transconductance and the low output conductance induce an extremely high intrinsic unloaded voltage gain (g_m/g_d) of 87.

Keywords

III-V semiconductors; aluminium compounds; electric admittance; gallium arsenide; high electron mobility transistors; indium compounds; In_0.52Al_0.48As-In_0.53Ga_0.47As; charge control efficiency; double-gate HEMT; drain current; extrinsic transconductance; Electrons; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Radio frequency; Substrates; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442713

Filename

1442713