Title :
InAlAs/InGaAs double-gate HEMTs with high extrinsic transconductance
Author :
Wichmann, N. ; Duszynski, I. ; Bollaert, S. ; Wallart, X. ; Cappy, A.
Author_Institution :
Departement Hyperfrequences et Semicond., Institut d´´Electronique, de Microelectronique et de Nanotechnologie, Villeneuve d´´Ascq, France
fDate :
31 May-4 June 2004
Abstract :
This paper reports fabrication, DC and RF characterization of the In0.52Al0.48As/In0.53Ga0.47As double-gate HEMTs with sub-micron gate lengths. These devices have obtained a maximum extrinsic transconductance gm of 2650 mS/mm with a corresponding drain current Id equal to 310 mA/mm. This extrinsic transconductance is the highest value ever reported for any transistor. Due to this high extrinsic transconductance, the ratio gm/Id is 8V-1 indicating the high charge control efficiency. Low output conductance gd is obtained, denoting the reduction of short channel effects. The combined high transconductance and the low output conductance induce an extremely high intrinsic unloaded voltage gain (gm/gd) of 87.
Keywords :
III-V semiconductors; aluminium compounds; electric admittance; gallium arsenide; high electron mobility transistors; indium compounds; In0.52Al0.48As-In0.53Ga0.47As; charge control efficiency; double-gate HEMT; drain current; extrinsic transconductance; Electrons; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Radio frequency; Substrates; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442713
