DocumentCode :
3371040
Title :
Influence of ICP etching on surface morphology of InP substrates
Author :
Karouta, F. ; Geluk, E.J. ; van der Heijden, R.W. ; Silov, A.Yu. ; Eijkemans, T. ; van der Tol, J.J.G.M. ; Smit, M.K. ; Salemink, H.W.M.
Author_Institution :
COBRA Res. Inst., Eindhoven Univ. of Technol., Netherlands
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
322
Lastpage :
325
Abstract :
We have investigated the effect of inductively coupled plasma (ICP) etching using a Ch2-CI4-H2 chemistry on the surface morphology of InP substrates. We have observed a strong dependence of the surface morphology on the etching times of semi-insulating (s.i.) InP-wafers. Pillars are formed after a sufficient etching time. Photoluminescence characterization revealed a strong correlation between morphology and PL signal intensity.
Keywords :
III-V semiconductors; etching; indium compounds; photoluminescence; plasma materials processing; surface morphology; ICP etching; InP; inductively coupled plasma etching; photoluminescence; surface morphology; Chemical technology; Etching; Indium phosphide; Nanowires; Plasma applications; Plasma chemistry; Rough surfaces; Scanning electron microscopy; Surface morphology; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442720
Filename :
1442720
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3371040
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