• DocumentCode
    3371040
  • Title

    Influence of ICP etching on surface morphology of InP substrates

  • Author

    Karouta, F. ; Geluk, E.J. ; van der Heijden, R.W. ; Silov, A.Yu. ; Eijkemans, T. ; van der Tol, J.J.G.M. ; Smit, M.K. ; Salemink, H.W.M.

  • Author_Institution
    COBRA Res. Inst., Eindhoven Univ. of Technol., Netherlands
  • fYear
    2004
  • fDate
    31 May-4 June 2004
  • Firstpage
    322
  • Lastpage
    325
  • Abstract
    We have investigated the effect of inductively coupled plasma (ICP) etching using a Ch2-CI4-H2 chemistry on the surface morphology of InP substrates. We have observed a strong dependence of the surface morphology on the etching times of semi-insulating (s.i.) InP-wafers. Pillars are formed after a sufficient etching time. Photoluminescence characterization revealed a strong correlation between morphology and PL signal intensity.
  • Keywords
    III-V semiconductors; etching; indium compounds; photoluminescence; plasma materials processing; surface morphology; ICP etching; InP; inductively coupled plasma etching; photoluminescence; surface morphology; Chemical technology; Etching; Indium phosphide; Nanowires; Plasma applications; Plasma chemistry; Rough surfaces; Scanning electron microscopy; Surface morphology; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8595-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2004.1442720
  • Filename
    1442720
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3371040