Title :
GaAsSb-based HBTs grown by production MBE system
Author :
Zhu, H.J. ; Kuo, J.-M. ; Pinsukanjana, P. ; Jin, X.J. ; Vargason, K. ; Herrera, M. ; Ontiveros, D. ; Boehme, C. ; Kao, Y.C.
Author_Institution :
Intelligent Epitaxy Technol. Inc., Richardson, TX, USA
fDate :
31 May-4 June 2004
Abstract :
This work investigates the growth of GaAsSb base DHBTs with InP and InAlAs emitters using a multi-wafer production MBE system. Favorable hole mobilities were measured for carbon-doped GaAsSb from 4.3E19 cm-3 to 1.8E20 cm-3 compared to their counterparts grown by MOCVD and gas-source MBE. Highly uniform GaAsSb epilayer with Sb composition fluctuation of less than ±0.1% across a 4" wafer was obtained in our multi-wafer MBE system. Large area devices of GaAsSb DHBTs fabricated with InAlAs emitters have better device characteristics than their InP emitter counterparts. The feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs was demonstrated through the extremely high uniformity of 4" GaAsSb wafer and the excellent electrical properties of InAJAs/GaAsSb/InP DHBTs.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; carbon; gallium arsenide; gallium compounds; heterojunction bipolar transistors; hole mobility; indium compounds; molecular beam epitaxial growth; 4 inch; GaAsSb:C; HBT; InAlAs-GaAsSb-InP; MOCVD; carbon; hole mobilities; multiwafer production MBE system; Current density; Double heterojunction bipolar transistors; Epitaxial growth; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Production systems; Thermal conductivity;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442724
