7-GHZ CMOS RF Front-End Monolithically Integrated with Inverted-F Antenna for Wireless Sensor System

Author

Ikebe, M. ; Ueo, D. ; Osabe, H. ; Inafune, K. ; Sano, E. ; Koutani, M. ; Ikeda, M. ; Mashiko, K.

Author_Institution

Hokkaido Univ., Sapporo

fYear

2007

fDate

10-14 June 2007

Firstpage

61

Lastpage

64

Abstract

Transmitter, receiver antennas and sensors monolithically integrated with CMOS LSIs are strongly demanded as a means of reducing the cost of wireless equipment. As the first step, an RF front- end (low-noise-amplifier [LNA] and mixer) is designed for use in the 7-GHz band corresponding to multi-band OFDM UWB group3 spectrum allocation. We clarify the design methodology of antennas on lossy Si substrates. The RF front-end with the antenna was fabricated using a 0.18-mum CMOS process. Measured conversion gain with 60-cm air interface is about -50 dB in the above band.

Keywords

CMOS integrated circuits; MMIC amplifiers; MMIC mixers; large scale integration; microwave antennas; receiving antennas; ultra wideband communication; wireless sensor networks; CMOS RF front-end; OFDM UWB group3 spectrum allocation; air interface; frequency 7 GHz; inverted-F antenna; large scale integration; wireless sensor system; CMOS process; Costs; Design methodology; OFDM; Radio frequency; Receiving antennas; Sensor systems; Transmitters; Transmitting antennas; Wireless sensor networks; RF front-end; UWB; lossy Si substrates; on chip antenna;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300071

Filename

4300071