Title :
Experimental investigation of dependence of electrical characteristics on device parameters in trench MOS barrier Schottky diodes
Author :
Sakai, Tatsuo ; Matsumoto, Satoshi ; Yachi, Toshiaki
Author_Institution :
NTT Corp., Tokyo, Japan
Abstract :
Measurements of forward and reverse electrical characteristics of trench MOS barrier Schottky diodes with various device parameters reveal that the resistivity and width of the mesa region are the main parameters which affect device characteristics. An on/off current ratio of two orders is obtained
Keywords :
MIS structures; Schottky diodes; electrical resistivity; isolation technology; power semiconductor diodes; semiconductor device testing; device parameters; electrical characteristics; electrical characteristics measurement; forward electrical characteristics; mesa region width; on/off current ratio; resistivity; reverse electrical characteristics; trench MOS barrier Schottky diodes; Circuits; Conductivity; Electric variables; Leakage current; Low voltage; MOSFETs; Power supplies; Schottky barriers; Schottky diodes; Semiconductor diodes;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702691
