DocumentCode
3371172
Title
Experimental investigation of dependence of electrical characteristics on device parameters in trench MOS barrier Schottky diodes
Author
Sakai, Tatsuo ; Matsumoto, Satoshi ; Yachi, Toshiaki
Author_Institution
NTT Corp., Tokyo, Japan
fYear
1998
fDate
3-6 Jun 1998
Firstpage
293
Lastpage
296
Abstract
Measurements of forward and reverse electrical characteristics of trench MOS barrier Schottky diodes with various device parameters reveal that the resistivity and width of the mesa region are the main parameters which affect device characteristics. An on/off current ratio of two orders is obtained
Keywords
MIS structures; Schottky diodes; electrical resistivity; isolation technology; power semiconductor diodes; semiconductor device testing; device parameters; electrical characteristics; electrical characteristics measurement; forward electrical characteristics; mesa region width; on/off current ratio; resistivity; reverse electrical characteristics; trench MOS barrier Schottky diodes; Circuits; Conductivity; Electric variables; Leakage current; Low voltage; MOSFETs; Power supplies; Schottky barriers; Schottky diodes; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location
Kyoto
ISSN
1063-6854
Print_ISBN
0-7803-4752-8
Type
conf
DOI
10.1109/ISPSD.1998.702691
Filename
702691
Link To Document