Title :
Wannier-Stark effect in GaxIn1-xAszP1-z/Gay In1-yAszP1-z superlattices on InP
Author :
Opitz, B. ; Kohl, A. ; Behres, A. ; Mertens, K. ; Heime, K. ; Schmitt, H.J.
Author_Institution :
Inst. fur Halbleitertechnik, Tech. Hochschule Aachen, Germany
Abstract :
We observed the Wannier-Stark effect in MOVPE-grown strain balanced GaxIn1-xAszP1-z/Ga yIn1-yAszP1-z superlattices with constant As-content. The observed transitions could be well described by a simple theoretical model. By careful design of the shallow superlattice, the advantages of its weak carrier confinement can be combined with operation at room temperature. First measurements in waveguide configuration yield an electroabsorptive modulation ratio of 42 dB/(Vmm), which is comparable with current CBE-grown GaInAs/InP superlattice data
Keywords :
III-V semiconductors; Stark effect; electroabsorption; gallium arsenide; gallium compounds; indium compounds; localised states; semiconductor epitaxial layers; semiconductor superlattices; GaInAsP; MOVPE; Wannier-Stark effect; delocalized states; electroabsorptive modulation ratio; electron localization; electronic minibands; flatband condition; oblique transitions; semiconductors; spatially direct transitions; superlattices; weak carrier confinement; Capacitive sensors; Diodes; Frequency; Indium phosphide; Lighting; Optical modulation; Optical superlattices; Photoconductivity; Stimulated emission; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492023
