• DocumentCode
    3371250
  • Title

    Wannier-Stark effect in GaxIn1-xAszP1-z/Gay In1-yAszP1-z superlattices on InP

  • Author

    Opitz, B. ; Kohl, A. ; Behres, A. ; Mertens, K. ; Heime, K. ; Schmitt, H.J.

  • Author_Institution
    Inst. fur Halbleitertechnik, Tech. Hochschule Aachen, Germany
  • fYear
    1996
  • fDate
    21-25 Apr 1996
  • Firstpage
    248
  • Lastpage
    251
  • Abstract
    We observed the Wannier-Stark effect in MOVPE-grown strain balanced GaxIn1-xAszP1-z/Ga yIn1-yAszP1-z superlattices with constant As-content. The observed transitions could be well described by a simple theoretical model. By careful design of the shallow superlattice, the advantages of its weak carrier confinement can be combined with operation at room temperature. First measurements in waveguide configuration yield an electroabsorptive modulation ratio of 42 dB/(Vmm), which is comparable with current CBE-grown GaInAs/InP superlattice data
  • Keywords
    III-V semiconductors; Stark effect; electroabsorption; gallium arsenide; gallium compounds; indium compounds; localised states; semiconductor epitaxial layers; semiconductor superlattices; GaInAsP; MOVPE; Wannier-Stark effect; delocalized states; electroabsorptive modulation ratio; electron localization; electronic minibands; flatband condition; oblique transitions; semiconductors; spatially direct transitions; superlattices; weak carrier confinement; Capacitive sensors; Diodes; Frequency; Indium phosphide; Lighting; Optical modulation; Optical superlattices; Photoconductivity; Stimulated emission; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
  • Conference_Location
    Schwabisch-Gmund
  • Print_ISBN
    0-7803-3283-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1996.492023
  • Filename
    492023
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3371250