A New Method for High-Rate Deep Dry Etching of Silicate Glass with Variable ETCH Profile

Author

Bertz, A. ; Fendler, R. ; Schuberth, R. ; Hentsch, W. ; Gessner, Th

Author_Institution

Chemnitz Univ. of Technol., Chemnitz

fYear

2007

fDate

10-14 June 2007

Firstpage

81

Lastpage

84

Abstract

Compared to the deep reactive ion etching (DRIE) of silicon, the etching of silicate glasses by plasma processing is much more critical. Especially high etch rates as well as highly selective etching are challenging issues in this respect. The following paper reports on a dry etching method offering not only selective and high rate etching but a high flexibility for the etch profile too.

Keywords

glass; micromechanical devices; sputter etching; deep glass etching; etch selectivity; high etch rate; high flexibility; high-rate deep dry etching; plasma processing; selective etching; silicate glass; variable etch profile; Dry etching; Glass; Optical materials; Plasma applications; Plasma chemistry; Plasma confinement; Plasma materials processing; Plasma measurements; Plasma temperature; Silicon; Deep glass etching; Etch profile; Etch rate; Etch selectivity; Plasma processing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300076

Filename

4300076