DocumentCode :
3371251
Title :
A New Method for High-Rate Deep Dry Etching of Silicate Glass with Variable ETCH Profile
Author :
Bertz, A. ; Fendler, R. ; Schuberth, R. ; Hentsch, W. ; Gessner, Th
Author_Institution :
Chemnitz Univ. of Technol., Chemnitz
fYear :
2007
fDate :
10-14 June 2007
Firstpage :
81
Lastpage :
84
Abstract :
Compared to the deep reactive ion etching (DRIE) of silicon, the etching of silicate glasses by plasma processing is much more critical. Especially high etch rates as well as highly selective etching are challenging issues in this respect. The following paper reports on a dry etching method offering not only selective and high rate etching but a high flexibility for the etch profile too.
Keywords :
glass; micromechanical devices; sputter etching; deep glass etching; etch selectivity; high etch rate; high flexibility; high-rate deep dry etching; plasma processing; selective etching; silicate glass; variable etch profile; Dry etching; Glass; Optical materials; Plasma applications; Plasma chemistry; Plasma confinement; Plasma materials processing; Plasma measurements; Plasma temperature; Silicon; Deep glass etching; Etch profile; Etch rate; Etch selectivity; Plasma processing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location :
Lyon
Print_ISBN :
1-4244-0842-3
Electronic_ISBN :
1-4244-0842-3
Type :
conf
DOI :
10.1109/SENSOR.2007.4300076
Filename :
4300076
Link To Document :
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