Butt coupling process for InP based photonic integrated circuits

Author

Gaumont, E. ; Graver, C. ; Gentner, J.L. ; Pinquier, A. ; Laube, G.

Author_Institution

Alcatel Alsthom Recherche, Marcoussis, France

fYear

1996

fDate

21-25 Apr 1996

Firstpage

256

Lastpage

258

Abstract

Photonic integrated circuits (PICs) require at least one integration between active sections and low loss passive sections. Among the different possible integration schemes such as evanescent coupling, selective area growth, MQW intermixing, butt coupling has the advantage of a completely separate optimisation of each section in terms of thickness, composition and electrical properties. This paper reports on a butt coupling technology, which can be considered as a building block for photonic integration. The main characteristics of the process-based on RIE and GSMBE-are described and the demonstration of low coupling losses is made

Keywords

III-V semiconductors; indium compounds; integrated optics; integrated optoelectronics; molecular beam epitaxial growth; optical couplers; optical fabrication; optical losses; semiconductor growth; sputter etching; GSMBE; InP; InP based photonic integrated circuits; RIE; active sections; building block; butt coupling; butt coupling process; butt coupling technology; composition; electrical properties; integration schemes; low coupling losses; low loss passive sections; photonic integration; separate optimisation; thickness; Coupling circuits; Digital modulation; Etching; Indium phosphide; Optical losses; Optical modulation; Optical waveguides; Photonic integrated circuits; Semiconductor optical amplifiers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492025

Filename

492025