Title :
Electrical isolation of MQW InGaAsP/InP structures by MeV iron ion implantation for vertical PIN modulators and photodiodes
Author :
Kong, S.F. ; Pantouvaki, M. ; Liu, C.P. ; Seeds, A.J. ; Too, P. ; Ahmed, S. ; Gwilliam, R. ; Roberts, J.S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fDate :
31 May-4 June 2004
Abstract :
Implantation-induced electrical isolation is a well known method in III-V semiconductor technology for the creation of local high resistivity regions in electronic and optoelectronic devices. In this paper, we demonstrate for the first time the fabrication of low leakage current (nA) planar vertical PIN modulators and detectors directly from epitaxial material using multiple energy Fe+ implant isolation in intentionally doped p- and n-type InP, and intrinsic multiple quantum well (MQW) InGaAsP layers.
Keywords :
III-V semiconductors; annealing; arsenic compounds; gallium arsenide; gallium compounds; indium compounds; ion implantation; iron; leakage currents; modulators; p-i-n photodiodes; semiconductor quantum wells; III-V semiconductor technology; InGaAsP-InP:Fe; MQW; MeV iron ion implantation; implantation-induced electrical isolation; leakage current; multiple quantum well; optoelectronic devices; photodiodes; vertical pin modulators; Conductivity; III-V semiconductor materials; Indium phosphide; Ion implantation; Iron; Isolation technology; Optical device fabrication; Optoelectronic devices; Photodiodes; Quantum well devices;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442730
