Title :
GaInAs/AlInAs-HEMTs grown on optical waveguide layers for photonic integrated circuits
Author :
Schlaak, W. ; Passenberg, W. ; Schramm, C. ; Mekonnen, G.G. ; Umbach, A. ; Ebert, W. ; Bach, H.-G.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
For optical networks in the 40 Gbit/s regime as well as in fiber-fed cellular microwave mobile communication systems high-speed optical receivers with high sensitivity are required. This work describes the development of GaInAs-AlInAs high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on metal-organic vapour phase epitaxy (MOVPE) layers. These devices are to be used in low-noise amplifier circuits as part of an optical receiver
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; cellular radio; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical fabrication; optical receivers; optical waveguides; p-i-n photodiodes; photodetectors; semiconductor growth; sensitivity; 40 Gbit/s; GaInAs-AlInAs; GaInAs-AlInAs high-electron mobility transistors; GaInAs/AlInAs-HEMTs; MBE; MOVPE layers; fiber-fed cellular microwave mobile communication systems; high sensitivity; high-speed optical receivers; low-noise amplifier circuits; metal-organic vapour phase epitaxy; molecular beam epitaxy; optical networks; optical receiver; optical waveguide layers; photonic integrated circuits; Epitaxial growth; HEMTs; High speed optical techniques; MODFETs; Molecular beam epitaxial growth; Optical fiber communication; Optical fiber networks; Optical receivers; Optical sensors; Optical waveguides;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492026
