DocumentCode :
3371327
Title :
Low-frequency transconductance dispersion characteristics of 0.13μm In0.65GaAs p-HEMTs with side-recessed InAlAs and InP surface
Author :
Kim, Tae-Woo ; Kim, Dae-Hyun ; In-Ho Kang ; Kim, Jeon Hoon ; Kwang-Seok Seo ; Song, Jong-In
Author_Institution :
Dept. of Inf. & Commun., GIST, Gwangju, South Korea
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
370
Lastpage :
373
Abstract :
Effects of side recess on kink effect and transconductance (gm) frequency dispersion characteristics of 0.13μm InGaAs p-HEMTs having InAlAs and InP surface were investigated. The p-HEMT having a 300 nm recessed InP surface showed negligible kink effect and gm dispersion due to the reduction in surface-state induced trap density in the InP etch-stop and impact-ionization induced hole current (Ig,hole).
Keywords :
III-V semiconductors; aluminium compounds; electric admittance; etching; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; surface states; 0.13 mum; 300 nm; In0.65GaAs; InAlAs; InP; impact-ionization induced hole current; kink effect; low-frequency transconductance dispersion; p-HEMT; side-recessed surface; surface-state induced trap density; Dispersion; Electron traps; Etching; Frequency; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442732
Filename :
1442732
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3371327
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