• DocumentCode
    3371327
  • Title

    Low-frequency transconductance dispersion characteristics of 0.13μm In0.65GaAs p-HEMTs with side-recessed InAlAs and InP surface

  • Author

    Kim, Tae-Woo ; Kim, Dae-Hyun ; In-Ho Kang ; Kim, Jeon Hoon ; Kwang-Seok Seo ; Song, Jong-In

  • Author_Institution
    Dept. of Inf. & Commun., GIST, Gwangju, South Korea
  • fYear
    2004
  • fDate
    31 May-4 June 2004
  • Firstpage
    370
  • Lastpage
    373
  • Abstract
    Effects of side recess on kink effect and transconductance (gm) frequency dispersion characteristics of 0.13μm InGaAs p-HEMTs having InAlAs and InP surface were investigated. The p-HEMT having a 300 nm recessed InP surface showed negligible kink effect and gm dispersion due to the reduction in surface-state induced trap density in the InP etch-stop and impact-ionization induced hole current (Ig,hole).
  • Keywords
    III-V semiconductors; aluminium compounds; electric admittance; etching; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; surface states; 0.13 mum; 300 nm; In0.65GaAs; InAlAs; InP; impact-ionization induced hole current; kink effect; low-frequency transconductance dispersion; p-HEMT; side-recessed surface; surface-state induced trap density; Dispersion; Electron traps; Etching; Frequency; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8595-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2004.1442732
  • Filename
    1442732
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3371327