Title :
4 kV merged PiN Schottky (MPS) rectifiers
Author :
Sawant, Shankar ; Baliga, B.Jayant
Author_Institution :
North Carolina State Univ., Raleigh, NC, USA
Abstract :
High voltage (4 kV) merged PiN Schottky (MPS) rectifiers are analyzed and experimentally demonstrated for the first time, as an alternative to high voltage PiN diodes. Extensive simulations were performed to optimize the structure of the MPS rectifier. High voltage MPS rectifiers were successfully fabricated and were found to have forward drops comparable to that of PiN rectifiers. The measured reverse recovery characteristics of the MPS diodes showed far superior performance with half the peak reverse recovery current as well as one-fourth the stored charge of the PiN diode. The reverse leakage current of the MPS rectifier (20% Schottky area) was also found to be comparable to that of the PiN rectifier even at elevated temperatures
Keywords :
Schottky diodes; leakage currents; optimisation; p-i-n diodes; power semiconductor diodes; semiconductor device models; semiconductor device testing; solid-state rectifiers; 4 kV; MPS diodes; MPS rectifier; MPS rectifier forward drop; MPS rectifier structure optimization; PiN rectifier; PiN rectifiers; Schottky area; high voltage MPS rectifiers; high voltage PiN diodes; high voltage merged PiN Schottky rectifiers; merged PiN Schottky rectifiers; reverse leakage current; reverse recovery characteristics; reverse recovery current; simulations; stored charge; Buildings; Cathodes; Charge measurement; Current measurement; Leakage current; Low voltage; Rectifiers; Schottky diodes; Semiconductor diodes; Temperature;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702692
