Title :
A wide-locking range SiGe BiCMOS divide-by-3 injection locked oscillators
Author :
Jang, Sheng-Lyang ; Chang, Chia-Wei ; Cheng, Ching-Lun ; Hsue, Ching-Wen ; Hsu, Chun-Wei
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Abstract :
An active inductor oscillator-based divide-by-3 injection locked frequency divider (ILFD) is proposed, and was implemented in the 0.35 μm SiGe 3P3M BiCMOS technology. Measurement results show that when the supply voltage Vdd is biased at 3.0 V, the free-running oscillation frequency of the ILFD is tunable from 3.84 GHz to 3.13 GHz, and at the incident power of 0 dBm and the Vtune = 2.5 V, the locking range is about 1.67 GHz, from the incident frequency 10.24 GHz to 11.91 GHz. The core power consumption is 4.32 mW at Vdd = 3.0 V.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; frequency dividers; injection locked oscillators; microwave integrated circuits; microwave oscillators; 3P3M BiCMOS technology; SiGe; active inductor oscillator; divide-by-3 injection locked oscillators; frequency 10.24 GHz to 11.91 GHz; frequency 3.84 GHz to 3.13 GHz; injection locked frequency divider; power 4.32 mW; size 0.35 mum; voltage 2.5 V; voltage 3 V; wide-locking range BiCMOS; BiCMOS integrated circuits; Frequency conversion; Frequency measurement; Heterojunction bipolar transistors; Phase noise; Sensitivity; Silicon germanium; SiGe HBT BiCMOS; active-inductor; divide-by-3 injection-locked frequency divider; locking range;
Conference_Titel :
VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8500-0
DOI :
10.1109/VDAT.2011.5783549
