A wide-locking range SiGe BiCMOS divide-by-3 injection locked oscillators

Author

Jang, Sheng-Lyang ; Chang, Chia-Wei ; Cheng, Ching-Lun ; Hsue, Ching-Wen ; Hsu, Chun-Wei

Author_Institution

Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan

fYear

2011

fDate

25-28 April 2011

Firstpage

1

Lastpage

4

Abstract

An active inductor oscillator-based divide-by-3 injection locked frequency divider (ILFD) is proposed, and was implemented in the 0.35 μm SiGe 3P3M BiCMOS technology. Measurement results show that when the supply voltage V_dd is biased at 3.0 V, the free-running oscillation frequency of the ILFD is tunable from 3.84 GHz to 3.13 GHz, and at the incident power of 0 dBm and the V_tune = 2.5 V, the locking range is about 1.67 GHz, from the incident frequency 10.24 GHz to 11.91 GHz. The core power consumption is 4.32 mW at V_dd = 3.0 V.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; frequency dividers; injection locked oscillators; microwave integrated circuits; microwave oscillators; 3P3M BiCMOS technology; SiGe; active inductor oscillator; divide-by-3 injection locked oscillators; frequency 10.24 GHz to 11.91 GHz; frequency 3.84 GHz to 3.13 GHz; injection locked frequency divider; power 4.32 mW; size 0.35 mum; voltage 2.5 V; voltage 3 V; wide-locking range BiCMOS; BiCMOS integrated circuits; Frequency conversion; Frequency measurement; Heterojunction bipolar transistors; Phase noise; Sensitivity; Silicon germanium; SiGe HBT BiCMOS; active-inductor; divide-by-3 injection-locked frequency divider; locking range;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on

Conference_Location

Hsinchu

ISSN

Pending

Print_ISBN

978-1-4244-8500-0

Type

conf

DOI

10.1109/VDAT.2011.5783549

Filename

5783549