Growth of InP single crystals by liquid encapsulated Czochralski (LEC) using glassy-carbon crucibles

Summary form only given, as follows. The growth of InP single crystals by LEC is usually performed using quartz or pyrolitic boron nitrite (PBN) crucibles. In the case of the quartz crucible, the encapsulant (B₂O₃) sticks to its walls causing it to break during cooling. Moreover, quartz is a source for silicon contamination. PBN crucibles do not present these problems; however they are very expensive. Using a high pressure puller and glassy-carbon crucibles, undoped InP single crystals weighting 100 g and with 25 mm diameter were grown in the ⟨100⟩ direction. The residual carrier concentration of samples, measured by the Van der Pauw method at 300K, was about 5×10¹⁵ cm^-3, a result as good as those obtained with quartz crucibles, with the advantage that glassy-carbon crucibles are fully reusable