Device stability of metamorphic InP/InGaAs heterojunction bipolar transistors by optical and electrical characterization

Author

Yang, Hong ; Hong Wang ; Radhakrishnan, K.

Author_Institution

Microelectronics Centre, Nanyang Technol. Univ., Singapore, Singapore

fYear

2004

fDate

31 May-4 June 2004

Firstpage

397

Lastpage

399

Abstract

Optical and electrical characterizations such as photoluminescence (PL) and low frequency noise measurements have been performed on different MHBT structures before and after the device processing to understand the correlation between these parameters and the device performance. The structural stability of the MHBTs subjected to rapid thermal annealing (RTA) has also been investigated by PL. The experimental results indicate a good correlation between the optical and electrical characteristics.

Keywords

III-V semiconductors; electric noise measurement; gallium arsenide; heterojunction bipolar transistors; indium compounds; photoluminescence; rapid thermal annealing; semiconductor device testing; stability; MHBT; RTA; device stability; low frequency noise measurements; metamorphic heterojunction bipolar transistors; photoluminescence; rapid thermal annealing; Electric variables measurement; Frequency measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low-frequency noise; Optical devices; Optical noise; Photoluminescence; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442739

Filename

1442739