Title :
Device stability of metamorphic InP/InGaAs heterojunction bipolar transistors by optical and electrical characterization
Author :
Yang, Hong ; Hong Wang ; Radhakrishnan, K.
Author_Institution :
Microelectronics Centre, Nanyang Technol. Univ., Singapore, Singapore
fDate :
31 May-4 June 2004
Abstract :
Optical and electrical characterizations such as photoluminescence (PL) and low frequency noise measurements have been performed on different MHBT structures before and after the device processing to understand the correlation between these parameters and the device performance. The structural stability of the MHBTs subjected to rapid thermal annealing (RTA) has also been investigated by PL. The experimental results indicate a good correlation between the optical and electrical characteristics.
Keywords :
III-V semiconductors; electric noise measurement; gallium arsenide; heterojunction bipolar transistors; indium compounds; photoluminescence; rapid thermal annealing; semiconductor device testing; stability; MHBT; RTA; device stability; low frequency noise measurements; metamorphic heterojunction bipolar transistors; photoluminescence; rapid thermal annealing; Electric variables measurement; Frequency measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low-frequency noise; Optical devices; Optical noise; Photoluminescence; Stability;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442739
