Improved bipolar cascade laser characteristics by optimization of InP electron stopper layers

Author

Dross, Frederic ; Van Dijk, Frederic ; Vinter, Borge

Author_Institution

Thales Res. & Technol., Orsay, France

fYear

2004

fDate

31 May-4 June 2004

Firstpage

400

Lastpage

402

Abstract

In order to design InP-based edge-emitting bipolar cascade lasers, we have developed a fully consistent transport model compatible with tunnel highly-doped junctions. We perform the simulation of single-mode laser structures and show the influence of doped InP layers surrounding the tunnel junctions on the characteristics of the devices. While increasing their width we analyze the reduction of current leakage but also the backward consequences on the optical characteristics. An asymmetric electron confining structure enables to obtain 230% external efficiency with a good optical confinement.

Keywords

leakage currents; optimisation; quantum cascade lasers; semiconductor device models; 230 percent; InP; asymmetric electron confining structure; bipolar cascade laser; current leakage; edge-emitting bipolar cascade lasers; electron stopper layers; optical confinement; single-mode laser structures; tunnel highly-doped junctions; Carrier confinement; Current density; Electron optics; Indium phosphide; Laser modes; Optical losses; Optical refraction; Optical variables control; Quantum cascade lasers; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442740

Filename

1442740