DocumentCode
3371533
Title
On the origin of the semi-insulating behaviour of low-temperature In0.52Al0.48As grown by molecular beam epitaxy
Author
Meva´a, C. ; Oustric, M. ; Viktorovitch, P. ; Letartre, X. ; Gendry, M. ; Hollinger, G. ; Bearzi, E. ; Benyattou, T. ; Guillot, G. ; Marty, O. ; Pitaval, M. ; Harmand, J.C. ; Quillec, M.
Author_Institution
CNRS, Ecole Centrale de Lyon, Ecully, France
fYear
1996
fDate
21-25 Apr 1996
Firstpage
300
Lastpage
303
Abstract
We have investigated the origin of the semi-insulating (SI) behaviour of low-temperature In0.52Al0.48As by correlating electrical and structural properties of epilayers grown by MBE on InP in the 300°C-565°C temperature range. Using a statistical model, we have analysed the dependence of the Fermi level energy on measurement temperature (77 K-400 K) for SI layers. The resistivity and the transport properties appear to be controlled by three electron traps whose origin is discussed on the basis of extended and structural point defects as observed by TEM
Keywords
Fermi level; III-V semiconductors; aluminium compounds; electrical resistivity; electron traps; indium compounds; molecular beam epitaxial growth; point defects; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; 300 to 565 degC; 77 to 400 K; Fermi level energy; In0.52Al0.48As; InP; TEM; electron traps; epitaxial layers; molecular beam epitaxy; point defects; resistivity; semi-insulating behaviour; semiconductors; statistical model; Admittance; Conductivity; Electric variables measurement; Indium phosphide; Molecular beam epitaxial growth; Position measurement; Schottky diodes; Temperature dependence; Temperature distribution; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location
Schwabisch-Gmund
Print_ISBN
0-7803-3283-0
Type
conf
DOI
10.1109/ICIPRM.1996.492038
Filename
492038
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