DocumentCode
3371575
Title
A family of novel surge protection devices with improved parameter control
Author
Walsh, P.R. ; Murray, A.F.J. ; Lane, W.A.
Author_Institution
Univ. Coll. Cork, Ireland
fYear
1998
fDate
3-6 Jun 1998
Firstpage
301
Lastpage
304
Abstract
A novel breakover diode (BOD) structure for overvoltage protection applications is proposed. The structure incorporates a surface breakdown trigger mechanism (SBTM), which facilitates the generation of a range of triggering voltages, independent of the starting material´s resistivity and by modification of only a single process step. Significant reduction in the tolerance of the triggering voltage (VBF) has also been achieved. The switching point´s dependence on the forward breakdown voltage has virtually been eliminated and independent control of the breakover current (IBO) is available. Prototype devices exhibit narrow breakover voltage (VBO) windows and significantly reduced leakage current (IL) ratings. Experimental results are in good agreement with simulated trends
Keywords
electric breakdown; electrical resistivity; overvoltage protection; power semiconductor diodes; semiconductor device testing; surge protection; breakover current; breakover diode structure; breakover voltage; forward breakdown voltage; leakage current rating; overvoltage protection; parameter control; starting material resistivity; surface breakdown trigger mechanism; surge protection devices; switching point; triggering voltage generation; triggering voltage tolerance; Board of Directors; Breakdown voltage; Cathodes; Conductivity; Diodes; Educational institutions; Electric breakdown; Surge protection; Telecommunication control; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location
Kyoto
ISSN
1063-6854
Print_ISBN
0-7803-4752-8
Type
conf
DOI
10.1109/ISPSD.1998.702693
Filename
702693
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