Title :
1.3-1.55 μm light emission from InGaAs/GaAs quantum wells on GaAs using dipole δ-doping
Author :
Wang, S.M. ; Zhao, Q.X. ; Wang, D. ; Wei, Y.-Q. ; Sadeghi, M. ; Larsson, A.
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
31 May-4 June 2004
Abstract :
We propose a new method for 1.3-1.55 μm lasers on GaAs using dipole δ-doping and demonstrate extension of photoluminescence wavelength from 1.07 to 1.55 μm in InGaAs/GaAs quantum wells at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical materials; photoluminescence; quantum well lasers; semiconductor doping; 1.07 to 1.55 mum; InGaAs-GaAs; dipole δ-doping; lasers; light emission; photoluminescence; quantum wells; Doping; Gallium arsenide; Indium gallium arsenide; Laser theory; Photoluminescence; Physics; Quantum dot lasers; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442744
