• DocumentCode
    3371624
  • Title

    High Voltage Impulse Generator Using HV-IGBTs

  • Author

    Giesselmann, M. ; Palmer, B. ; Neuber, A. ; Donlon, J.

  • Author_Institution
    Dept of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX
  • fYear
    2005
  • fDate
    13-17 June 2005
  • Firstpage
    763
  • Lastpage
    766
  • Abstract
    We are reporting on a High-Voltage Impulse Generator, which consists of a step-up transformer, which is driven by new HV-IGBTs (High-Voltage Isolated Gate Bipolar Transistors). The new HV-IGBTs are individually packaged silicon-dies intended for Pulsed-Power Applications. The silicon dies are normally packaged in large modules for locomotive motor drives and similar traction applications. In our work we used the Powerex QIS4506001 discrete IGBT and the QRS4506001 discrete diode, both with a nominal rating of 4500V/60A, derived from continuous- duty applications. Our experiments have shown that the devices are capable of handling currents in excess of 1 kA during pulsed operation.
  • Keywords
    insulated gate bipolar transistors; pulse generators; QIS4506001 discrete IGBT; QRS4506001 discrete diode; high voltage impulse generator; high-voltage isolated gate bipolar transistors; individually packaged silicon-dies; locomotive motor drives; step-up transformer; Flashover; Insulated gate bipolar transistors; Motor drives; Packaging; Power generation; Power transmission lines; Pulse generation; Pulse transformers; Pulse width modulation; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference, 2005 IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-7803-9189-6
  • Electronic_ISBN
    0-7803-9190-x
  • Type

    conf

  • DOI
    10.1109/PPC.2005.300773
  • Filename
    4084329