DocumentCode :
3371624
Title :
High Voltage Impulse Generator Using HV-IGBTs
Author :
Giesselmann, M. ; Palmer, B. ; Neuber, A. ; Donlon, J.
Author_Institution :
Dept of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX
fYear :
2005
fDate :
13-17 June 2005
Firstpage :
763
Lastpage :
766
Abstract :
We are reporting on a High-Voltage Impulse Generator, which consists of a step-up transformer, which is driven by new HV-IGBTs (High-Voltage Isolated Gate Bipolar Transistors). The new HV-IGBTs are individually packaged silicon-dies intended for Pulsed-Power Applications. The silicon dies are normally packaged in large modules for locomotive motor drives and similar traction applications. In our work we used the Powerex QIS4506001 discrete IGBT and the QRS4506001 discrete diode, both with a nominal rating of 4500V/60A, derived from continuous- duty applications. Our experiments have shown that the devices are capable of handling currents in excess of 1 kA during pulsed operation.
Keywords :
insulated gate bipolar transistors; pulse generators; QIS4506001 discrete IGBT; QRS4506001 discrete diode; high voltage impulse generator; high-voltage isolated gate bipolar transistors; individually packaged silicon-dies; locomotive motor drives; step-up transformer; Flashover; Insulated gate bipolar transistors; Motor drives; Packaging; Power generation; Power transmission lines; Pulse generation; Pulse transformers; Pulse width modulation; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference, 2005 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-9189-6
Electronic_ISBN :
0-7803-9190-x
Type :
conf
DOI :
10.1109/PPC.2005.300773
Filename :
4084329
Link To Document :
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