Design optimization of InGaAsP-InGaAlAs 1.55 μm strain-compensated MQW lasers for direct modulation applications

Author

Akram, M. Nadeem ; Silfvenius, Christofer ; Berggren, Jesper ; Kjebon, Olle ; Schatz, Richard

Author_Institution

Dept. of Micro-electron. & Inf. Technol., R. Inst. of Technol., Stockholm, Sweden

fYear

2004

fDate

31 May-4 June 2004

Firstpage

418

Lastpage

421

Abstract

A comprehensive simulation study of InGaAsP (well)/InGaAlAs(barrier) 1.55 μm strain-compensated MQW lasers is presented. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and strain of the barriers and p-doping in the active region. Some preliminary results are also presented for the manufactured lasers using these QWs indicating a good material platform.

Keywords

III-V semiconductors; aluminium compounds; arsenic compounds; compensation; energy gap; gallium arsenide; gallium compounds; hole traps; indium compounds; laser transitions; optical modulation; optimisation; quantum well lasers; 1.55 mum; InGaAsP-InGaAlAs; bandgap; direct modulation applications; effective hole confinement energy; strain-compensated MQW lasers; Capacitive sensors; Carrier confinement; Charge carrier processes; Conducting materials; Design optimization; Optical materials; Photonic band gap; Quantum well devices; Tensile strain; Thermionic emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442745

Filename

1442745