Title :
High frequency performance of 3-quantum well GaInNAs/GaAs ridge waveguide lasers emitting at 1.35 micron
Author :
Martinez, A. ; Sallet, V. ; Jahan, D. ; Provost, J.G. ; Dagens, B. ; Ferlazzo, L. ; Harmand, J.C. ; Ramdane, A.
Author_Institution :
Lab. de Photonique et de Nanostructures, CNRS, Marcoussis, France
fDate :
31 May-4 June 2004
Abstract :
The high frequency properties of three-quantum well GaInNAs/GaAs lasers emitting at 1.35 μm have been investigated. A relaxation frequency of 7.4 GHz and a 9.7 GHz small signal bandwidth are reported for this material system, showing potential for high-bit rate (10 Gbit/s) direct modulation.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser transitions; optical communication equipment; quantum well lasers; ridge waveguides; waveguide lasers; 1.35 mum; 7.4 GHz; 9.7 GHz; GaInNAs-GaAs; direct modulation; quantum well ridge waveguide lasers; relaxation frequency; Bandwidth; Frequency; Gallium arsenide; Optical materials; Optical waveguides; Pulsed laser deposition; Quantum well lasers; Semiconductor lasers; Temperature; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442746
