Implant isolation for lattice matched InGaAs/InAlAs/InP modulation doped field effect transistor realisation

We have investigated implant isolation for lattice matched InGaAs/InAlAs/InP Modulation Doped Field Effect Transistors (MODFETs). The sheet resistances of the MODFET layers were measured after implantation of different ions species (H⁺, B⁺, F ⁺ and Ar⁺), for different ion doses (10¹² -10¹⁵ cm^-2) and after post implant annealing (100°C-400°C) for different annealing time (10 min-24 h). The best measured sheet resistance was about 30 MΩ/□ using Ar ⁺ implantation with a dose of 1.10¹⁵ cm^-2 and 10 hours annealing at 300°C. This is the best implant isolation result obtained for InP lattice matched MODFET layer to our knowledge. This result allows us to realise planar InP lattice matched MODFET with a good isolation