Title :
Shallow Si/Pd-based ohmic contacts to n type Al0.5In0.5P and Ga0.5In0.5P
Author :
Hao, P.H. ; Wang, L.C. ; Chang, J.C.P. ; Kuo, J.M.
Author_Institution :
Texas A&M Univ., College Station, TX, USA
Abstract :
Si/Pd-based contact schemes based on the solid phase regrowth (SPR) principle have been developed to form low resistance ohmic contacts to n type Al0.5In0.5P and Ga0.5In0.5P lattice matched to GaAs grown by gas source molecular beam epitaxy (GSMBE). Lowest contact resistivities of ~6×10-6 Ω-cm2 and ~1×10-5 Ω-cm2 have been obtained on Al0.5In 0.5P and Ga0.5In0.5P respectively (both doped to ~2×1018 cm-3). In this article, the electrical properties and the ohmic contact formation model of the Si/Pd-based contacts to n-Al0.5In0.5P and n-Ga0.5In0.5P are presented
Keywords :
III-V semiconductors; contact resistance; indium compounds; ohmic contacts; palladium; rapid thermal annealing; silicon; Al0.5In0.5P; Ga0.5In0.5P; RTA; Si-Pd; electrical properties; gas source molecular beam epitaxy; low resistance ohmic contacts; n type Al0.5In0.5P; n type Ga0.5In0.5P; ohmic contact formation model; shallow Si/Pd-based ohmic contacts; solid phase regrowth; Conductivity; Contact resistance; Epitaxial layers; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Ohmic contacts; Rapid thermal annealing; Solids; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492050
