Title :
Pd/Zn/Pd ohmic contact to p-InP
Author :
Park, Moon-Ho ; Wang, L.C. ; Cheng, J.Y. ; Deng, F. ; Lau, S.S. ; Palmstrøm, C.J.
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
A low resistance Zn/Pd ohmic contact scheme to p-InP based on the solid phase regrowth principle has been investigated. The lowest contact resistivity (mid 10-5 Ω-cm2) has been obtained for contacts with an atomic ratio of Zn to Pd of ~1.5. The solid phase regrowth process has been confirmed in the Zn/Pd/InP system. In addition to the solid phase regrowth process, a Zn3P2 /InP heterojunction is formed at the contact/semiconductor interface. The ohmic contact formation mechanism is rationalized with the formation of Zn3P2/InP heterojunction. Also, it was found that the TLM plot for the thick-Zn (>600 Å) sample started to show abnormal data distribution for annealing temperatures higher than 480°C. This abnormal behavior may be caused by the lateral Zn diffusion from the excess Zn in the contact pads into the off-mesa area during annealing
Keywords :
II-VI semiconductors; annealing; contact resistance; diffusion; indium compounds; ohmic contacts; palladium; semiconductor heterojunctions; semiconductor-metal boundaries; zinc; zinc compounds; InP; Pd-Zn-Pd; Pd/Zn/Pd ohmic contact; Zn3P2/InP heterojunction; annealing temperatures; contact/semiconductor interface; data distribution; lateral Zn diffusion; low resistance ohmic contact; off-mesa area; p-InP; solid phase regrowth principle; Annealing; Atomic layer deposition; Conductivity; Contact resistance; Heterojunctions; Indium phosphide; Ohmic contacts; Solids; Substrates; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492051
