Title :
Cosmic ray neutron induced upsets as a major contributor to the soft error rate of current and future generation DRAMs
Author :
McKee, W.R. ; McAdams, H.P. ; Smith, E.B. ; McPherson, J.W. ; Janzen, J.W. ; Ondrusek, J.C. ; Hyslop, A.E. ; Russell, D.E. ; Coy, R.A. ; Bergman, D.W. ; Nguyen, N.Q. ; Aton, T.J. ; Block, L.W. ; Huynh, V.C.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
April 30 1996-May 2 1996
Abstract :
The system soft error rate (SSER) of 4M/16M DRAMs has been shown to be dependent on the cosmic ray neutron flux. A simple model and accelerated soft error rate (ASER) measurements made with an intense, high energy neutron beam support this result. The model predicts that cosmic ray neutron induced soft errors will become important at the 64M DRAM generation and beyond.
Keywords :
DRAM chips; errors; integrated circuit modelling; integrated circuit reliability; neutron effects; 4 to 64 Mbit; DRAMs; cosmic ray neutron flux; cosmic ray neutron induced upsets; dynamic RAM; high energy neutron beam; model; soft error rate; system soft error rate; Aerospace electronics; Aircraft; Cosmic rays; Electrons; Error analysis; Instruments; Mesons; Neutrons; Protons; Silicon;
Conference_Titel :
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-2753-5
DOI :
10.1109/RELPHY.1996.492052
