DocumentCode :
3371848
Title :
Feasibility of realizing quantum dots sensitive to TM mode lights with wavelength of 1.5 μm
Author :
Ebe, E. ; Nakata, Y. ; Sugawara, M. ; Arakawa, Y.
Author_Institution :
Inst. of Industrial Sci., Tokyo Univ., Japan
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
443
Lastpage :
446
Abstract :
We calculate band lineups and show that we can obtain 1.5 μm and TM sensitive InxGa1-xAs QDs by controlling strains both in plane and growth directions. InAs QD should relax in plane directions. GaAs QD should expand in growth directions.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical materials; semiconductor growth; semiconductor quantum dots; 1.5 mum; InxGa1-xAs; TM mode lights; band lineups; quantum dots; semiconductor growth; strain control; Capacitive sensors; Gallium arsenide; Indium phosphide; Intrusion detection; Lattices; Quantum dots; Semiconductor optical amplifiers; Strain control; Tellurium; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442752
Filename :
1442752
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3371848
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