DocumentCode
3371880
Title
Smart power technologies on SOI
Author
Wessels, Piet
Author_Institution
NXP Semicond., Nijmegen, Netherlands
fYear
2011
fDate
25-28 April 2011
Firstpage
1
Lastpage
2
Abstract
This paper gives a summary on SOI based Smart Power technologies. The benefit of SOI is explained by reviewing the basic power device concepts. SOI enables full dielectric isolation of devices. In power applications this can be used to build products with improved EMC, improved robustness. Another dominant aspect is that devices can be biased above the supply voltage or below the ground voltage, without suffering from electrical overstress or the trigger of parasitic transistors. It also enables the integration of minority carrier devices into an integrated circuit. NXP uses those benefits in the SOI based technologies, like A-BCD (for medium voltages) and EZ HV (for high voltages). Other semiconductor manufacturers use the SOI for similar reasons, or extend the voltage range of their baseline technology. Main drawback of SOI is the relative high price of the starting material.
Keywords
electromagnetic compatibility; power electronics; silicon-on-insulator; A-BCD; EMC; EZ HV; NXP; SOI; device dielectric isolation; electromagnetic compatibility; integrated circuit; parasitic transistors; power device; semiconductor manufacturers; silicon-on-insulator; smart power technologies; Automotive engineering; Driver circuits; Electrostatic discharge; Integrated circuits; Resistance; Transceivers; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on
Conference_Location
Hsinchu
ISSN
Pending
Print_ISBN
978-1-4244-8500-0
Type
conf
DOI
10.1109/VDAT.2011.5783571
Filename
5783571
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