• DocumentCode
    3371880
  • Title

    Smart power technologies on SOI

  • Author

    Wessels, Piet

  • Author_Institution
    NXP Semicond., Nijmegen, Netherlands
  • fYear
    2011
  • fDate
    25-28 April 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper gives a summary on SOI based Smart Power technologies. The benefit of SOI is explained by reviewing the basic power device concepts. SOI enables full dielectric isolation of devices. In power applications this can be used to build products with improved EMC, improved robustness. Another dominant aspect is that devices can be biased above the supply voltage or below the ground voltage, without suffering from electrical overstress or the trigger of parasitic transistors. It also enables the integration of minority carrier devices into an integrated circuit. NXP uses those benefits in the SOI based technologies, like A-BCD (for medium voltages) and EZ HV (for high voltages). Other semiconductor manufacturers use the SOI for similar reasons, or extend the voltage range of their baseline technology. Main drawback of SOI is the relative high price of the starting material.
  • Keywords
    electromagnetic compatibility; power electronics; silicon-on-insulator; A-BCD; EMC; EZ HV; NXP; SOI; device dielectric isolation; electromagnetic compatibility; integrated circuit; parasitic transistors; power device; semiconductor manufacturers; silicon-on-insulator; smart power technologies; Automotive engineering; Driver circuits; Electrostatic discharge; Integrated circuits; Resistance; Transceivers; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    Pending
  • Print_ISBN
    978-1-4244-8500-0
  • Type

    conf

  • DOI
    10.1109/VDAT.2011.5783571
  • Filename
    5783571