Title :
High-performance SiC power devices and modules with high temperature operation
Author :
Nakamura, T. ; Nakano, Y. ; Sasagawa, M. ; Otsuka, T. ; Aketa, M. ; Miura, M.
Author_Institution :
ROHM CO., Ltd., Kyoto, Japan
Abstract :
The expectation for SiC devices in advanced power electronics applications for saving energy has been still larger. The 4H-SiC planer MOSFETs with high blocking voltage (1300 V) and large current (40 A) were fabricated. In addition, we have succeeded in fabricating the larger current (300 A) 4H-SiC trench MOSFET with low-on resistance (2.6 mΩ cm2). And, regarding high-temperature operation, SiC IPMs can be successfully fabricated by using a new bonding soldering method which can withstand even 400°C.
Keywords :
MOSFET; power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; current 300 A; current 40 A; voltage 1300 V; Bonding; Logic gates; MOSFETs; Silicon carbide; Soldering; Switches; Temperature;
Conference_Titel :
VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8500-0
DOI :
10.1109/VDAT.2011.5783572
