• DocumentCode
    3371919
  • Title

    High-performance SiC power devices and modules with high temperature operation

  • Author

    Nakamura, T. ; Nakano, Y. ; Sasagawa, M. ; Otsuka, T. ; Aketa, M. ; Miura, M.

  • Author_Institution
    ROHM CO., Ltd., Kyoto, Japan
  • fYear
    2011
  • fDate
    25-28 April 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The expectation for SiC devices in advanced power electronics applications for saving energy has been still larger. The 4H-SiC planer MOSFETs with high blocking voltage (1300 V) and large current (40 A) were fabricated. In addition, we have succeeded in fabricating the larger current (300 A) 4H-SiC trench MOSFET with low-on resistance (2.6 mΩ cm2). And, regarding high-temperature operation, SiC IPMs can be successfully fabricated by using a new bonding soldering method which can withstand even 400°C.
  • Keywords
    MOSFET; power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; current 300 A; current 40 A; voltage 1300 V; Bonding; Logic gates; MOSFETs; Silicon carbide; Soldering; Switches; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    Pending
  • Print_ISBN
    978-1-4244-8500-0
  • Type

    conf

  • DOI
    10.1109/VDAT.2011.5783572
  • Filename
    5783572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3371919